| PART |
Description |
Maker |
| PHT11N06T PHT11N06 |
TrenchMOS transistor Standard level FET 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
TrenchMOS transistor Logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK9535-55 |
TrenchMOS锛?M锛?ransistor Logic level FET(TrenchMOS锛?M锛??浣???昏??靛钩FET)
TrenchMOS transistor Logic level FET
TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET)
TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUK9505-30A BUK9505-30A_2 |
TrenchMOS? transistor Logic level FET
TrenchMOS(tm) transistor Logic level FET
From old datasheet system
TrenchMOS TM transistor Logic level FET
TrenchMOS transistor Logic level FET
|
NXP Semiconductors
Philips
|
| BUK9605-30A BUK9605-30A_2 |
TrenchMOS transistor Logic level FET
TrenchMOS TM transistor Logic level FET
From old datasheet system
TrenchMOS(tm) transistor Logic level FET
|
NXP Semiconductors
Philips
|
| MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| BUK553-100A BUK553-100B BUK553-100A/B |
TRANSISTOR UNIVERSAL MOSFET SOT
PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK7520-55A BUK7620-55A |
TrenchMOS(tm) standard level FET
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
TrenchMOS TM standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MTA1N60E |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
| BUK9120-48TC |
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(甯?俯搴??搴??????????OS?充??靛??昏??靛钩?烘?搴??)
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(带温度感应二极管的功率MOS钳位电压逻辑电平场效应管) 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Philips Semiconductors
NXP Semiconductors N.V.
|
